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STI300N4F6

批量生产
储存到myST

N-channel 40 V, 1.7 mOhm typ., 160 A STripFET F6 Power MOSFET in an I2PAK package

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样片和购买
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快速链接

  • This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

    主要特性

    • Standard level VGS(th)
    • 100% avalanche rated
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STI300N4F6 I2PAK Tube
批量生产
3.0 1000 EAR99 CHINA 查看供货情况

Distributor availability ofSTI300N4F6

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 100 1 Order Now

代理商库存报告日期: 2019-10-10

代理商名称

MOUSER

库存

100

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-10-10

立即购买

STI300N4F6

封装

I2PAK

包装类型

Tube
More Info

单价(US$)

3.0*

Distributor availability ofSTI300N4F6

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 100 1 Order Now

代理商库存报告日期: 2019-10-10

代理商名称

MOUSER

库存

100

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-10-10

供货状态

批量生产

单价(US$)

3

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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适合您的资源

开发工具硬件

    • 产品型号
      ST MOSFET Finder

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      		DS6985
      N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™ Power MOSFET in a I²PAK package       		2.1
      777.31 KB
      		PDF
      DS6985

      N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™ Power MOSFET in a I²PAK package

      PDF
    • 描述 版本 文档大小 操作
      		AN3267
      Impact of power MOSFET VGS on buck converter performance       		1.2
      1.13 MB
      		PDF
      		AN4191
      Power MOSFET: Rg impact on applications       		1.2
      1.45 MB
      		PDF
      		AN4390
      ST’s MOSFET technologies for uninterruptible power supplies       		1.1
      1.22 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      PDF
      AN4191

      Power MOSFET: Rg impact on applications

      PDF
      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		STI300N4F6 PSpice model 2.0
      10.35 KB
      		ZIP

      STI300N4F6 PSpice model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      743.73 KB
      		PDF
      		STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
      		PDF

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      PDF

      STPOWER™ STripFET F7 MOSFET for Industrial applications

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STI300N4F6
批量生产
I2PAK 汽车 Ecopack1

STI300N4F6

Package:

I2PAK

Material Declaration**:

More Info

Marketing Status

批量生产

Package

I2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.