STI33N60M2

批量生产

N沟道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET,I2PAK封装

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概述
样片和购买
解决方案
Documentation
CAD Resources
工具与软件
质量与可靠性
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  • These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

    主要特性

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected

All tools & software

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STI33N60M2

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STI33N60M2
批量生产
I2PAK 工业 Ecopack2

STI33N60M2

Package:

I2PAK

Material Declaration**:

Marketing Status

批量生产

Package

I2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
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供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STI33N60M2 无法联系到经销商,请联系我们的销售办事处 Buy Direct
批量生产
EAR99 NEC Tube I2PAK - - CHINA

STI33N60M2

供货状态

批量生产

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

I2PAK

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商