N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAK

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  • These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

    主要特性

    • 100% avalanche tested
    • Extremely high dv/dt capability
    • Gate charge minimized
    • Very low intrinsic capacitance
    • Improved diode reverse recovery characteristics
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STI6N62K3 I2PAK Tube
Active
- EAR99 CHINA 查看供货情况

Distributor availability ofSTI6N62K3

代理商名称
地区 库存 最小订购量 Third party link
P&S ASIA/PACIFIC 700 1 Order Now
MOUSER WORLDWIDE 90 1 Order Now

代理商库存报告日期: 2019-08-23

代理商名称

P&S

库存

700

Min.Order

1

地区

ASIA/PACIFIC Order Now

MOUSER

库存

90

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-08-23

立即购买

STI6N62K3

封装

I2PAK

包装类型

Tube

Unit Price (US$)

*

Distributor availability ofSTI6N62K3

代理商名称
地区 库存 最小订购量 Third party link
P&S ASIA/PACIFIC 700 1 Order Now
MOUSER WORLDWIDE 90 1 Order Now

代理商库存报告日期: 2019-08-23

代理商名称

P&S

库存

700

Min.Order

1

地区

ASIA/PACIFIC Order Now

MOUSER

库存

90

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-08-23

供货状态

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

精选 产品

适合您的资源

开发工具硬件

    • 产品型号

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS5818
      N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages
      4.1
      1.02 MB
      PDF
      DS5818

      N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STI6N62K3 PSpice model 1.0
      2.46 KB
      ZIP

      STI6N62K3 PSpice model

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STI6N62K3
Active
I2PAK 工业 Ecopack2

STI6N62K3

Package:

I2PAK

Material Declaration**:

Marketing Status

Active

Package

I2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.