STL110N4F7AG

批量生产
Design Win

汽车级N沟道40 V、2.1 mOhm典型值、108 A STripFET F7功率MOSFET,PowerFLAT 5x6封装

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产品概述

描述

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

  • 所有功能

    • AEC-Q101 qualified
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

EDA符号、封装和3D模型

STMicroelectronics - STL110N4F7AG

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封装

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3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STL110N4F7AG
批量生产
PowerFLAT 5x6 WF 汽车应用 Ecopack2

STL110N4F7AG

Package:

PowerFLAT 5x6 WF

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

PowerFLAT 5x6 WF

Grade

Automotive

RoHS Compliance Grade

Ecopack2

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样片和购买

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STL110N4F7AG
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STL110N4F7AG 批量生产

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产品型号:

STL110N4F7AG

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商