STL12N10F7

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Design Win

N沟道100 V、11.3 mΩ典型值、12 A STripFET F7功率MOSFET,PowerFLAT 3.3x3.3封装

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产品概述

描述

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

  • 所有功能

    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

EDA符号、封装和3D模型

STMicroelectronics - STL12N10F7

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