-
This device is an P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on)in all packages.
主要特性
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
精选 视频
All tools & software
All resources
产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 21 Nov 2014 |
21 Nov 2014
|
应用手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 13 Sep 2018 |
13 Sep 2018
|
用户手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 21 Oct 2016 |
21 Oct 2016
|
宣传册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 08 May 2020 |
08 May 2020
|
CAD/EDA Symbols, Footprints and Models
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STL12P6F6 | 3 distributors | Free Sample Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | PowerFLAT 5x6 | - | - | CHINA | 0.6 / 1k | |
