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This device is an P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on)in all packages.
主要特性
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | ECCN (US) | Country of Origin | Approximate Price (US$)* / Qty | 从ST订购 | 从分销商订购 |
|---|---|---|---|---|---|---|---|---|
| STL12P6F6 | PowerFLAT 5x6 | Tape And Reel | 批量生产 | EAR99 | CHINA | 1.09 / 1k | 查看供货情况 |
STL12P6F6
封装
PowerFLAT 5x6包装类型
Tape And ReelApproximate Price (US$)* / Qty
1.09 / 1k