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This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
主要特性
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
All tools & software
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产品规格 (1)
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21 Nov 2019 |
21 Nov 2019
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应用手册 (5)
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13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
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21 Oct 2016 |
21 Oct 2016
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宣传册 (4)
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13 Jun 2019 |
13 Jun 2019
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手册 (1)
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23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
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硬件型号、CAD库及SVD (1)
Resource title | Latest update | |||
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ZIP | 11 Jan 2021 |
11 Jan 2021
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STL160N4F7 | 2 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tape And Reel | PowerFLAT 5x6 | - | - | CHINA | 0.85 / 1k |