STL180N6F7

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概述

工具与软件

资源

解决方案

质量与可靠性

Sales Briefcase

eDesignSuite

开始

样片和购买

Partner products

快速链接

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

主要特性
- Among the lowest R_DS(on) on the market
- Excellent FoM (figure of merit)
- Low C_rss/C_iss ratio for EMI immunity
- High avalanche ruggedness
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样片和购买

产品型号	封装	包装类型	供货状态	预算价格(US$)	数量	ECCN (US)	Country of Origin	从分销商订购	从ST订购
STL180N6F7	PowerFLAT 5x6	Tape And Reel	批量生产	0.93	1000	EAR99	CHINA	没有经销商，请联系我们的销售办事处

STL180N6F7

封装

PowerFLAT 5x6

包装类型

Tape And Reel

More Info

单价(US$)

0.93*

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

开发工具硬件

软件开发工具
- Picture 产品型号
  
  制造商
  
  描述
  
  ST MOSFET Finder ST MOSFET product finder application for Android and iOS
  
  产品型号
  
  ST MOSFET Finder
  
  MOSFET product finder application for Android and iOS

Picture	产品型号	制造商	描述
	ST MOSFET Finder	ST	MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

产品规格
- 描述版本文档大小操作
  
  DS12377
  N-channel 60 V, 1.9 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package 2.0
  822.35 KB
  PDF
  
  DS12377
  
  N-channel 60 V, 1.9 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
  
  PDF

	描述	版本	文档大小	操作
	DS12377 N-channel 60 V, 1.9 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package	2.0	822.35 KB	PDF

应用手册

描述	版本	文档大小	操作
AN3267 Impact of power MOSFET VGS on buck converter performance	1.2	1.13 MB	PDF
AN4789 Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance	1.1	1,006.7 KB	PDF
AN4191 Power MOSFET: Rg impact on applications	1.2	1.45 MB	PDF
AN4390 ST’s MOSFET technologies for uninterruptible power supplies	1.1	1.22 MB	PDF
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	347.01 KB	PDF

AN3267

Impact of power MOSFET VGS on buck converter performance

PDF

AN4789

Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

PDF

AN4191

Power MOSFET: Rg impact on applications

PDF

AN4390

ST’s MOSFET technologies for uninterruptible power supplies

PDF

AN4337

The avalanche issue: comparing the impacts of the IAR and EAS parameters

PDF

用户手册
- 描述版本文档大小操作
  
  UM1575
  Spice model tutorial for Power MOSFETs 1.3
  1.51 MB
  PDF
  
  UM1575
  
  Spice model tutorial for Power MOSFETs
  
  PDF

	描述	版本	文档大小	操作
	UM1575 Spice model tutorial for Power MOSFETs	1.3	1.51 MB	PDF

硬件型号、CAD库及SVD

	描述	版本	文档大小	操作
	STL180N6F7 pSpice Model	1.0	5.12 KB	ZIP

出版刊物和宣传资料

宣传册

	描述	版本	文档大小	操作
	AEC-Q101 STripFET F7 MOSFETs for Automotive	1.0	743.73 KB	PDF
	STPOWER™ STripFET F7 MOSFET for Industrial applications	1.0	1.15 MB	PDF

AEC-Q101 STripFET F7 MOSFETs for Automotive

PDF

STPOWER™ STripFET F7 MOSFET for Industrial applications

PDF

手册
- 描述版本文档大小操作
  
  Electric vehicle (EV) ecosystem 1.1
  1.28 MB
  PDF
  
  Electric vehicle (EV) ecosystem
  
  PDF

	描述	版本	文档大小	操作
	Electric vehicle (EV) ecosystem	1.1	1.28 MB	PDF

产品型号	供货状态	封装	等级规格	符合RoHS级别	Material Declaration**
STL180N6F7	批量生产	PowerFLAT 5x6	工业	Ecopack2	PDF XML

STL180N6F7

Package:

PowerFLAT 5x6

Material Declaration**:

PDF XML

More Info

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.