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This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
主要特性
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Logic level
- Wettable flank package
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产品规格 (1)
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| 16 Apr 2018 |
16 Apr 2018
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
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| 08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL19N3LLH6AG
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STL19N3LLH6AG | 无法联系到经销商，请联系我们的销售办事处 |
批量生产
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EAR99 | NEC | Tape And Reel | PowerFLAT 5x6 WF | - | - | CHINA | |||
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
