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STL25N60M2-EP

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N沟道600 V、0.184 Ohm典型值、16 A MDmesh M2 EP功率MOSFET，PowerFLAT 8x8 HV封装

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This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

主要特性
- Extremely low gate charge
- Excellent output capacitance (C_OSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
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STEVAL-ILL053V2	批量生产	基于L6562和L6599的48 V - 130 W高效转换器，具有PFC，用于LED街道照明应用	LED和一般照明解决方案评估板	--	STEVAL-ILL053V2 描述: 基于L6562和L6599的48 V - 130 W高效转换器，具有PFC，用于LED街道照明应用

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产品型号	状态	描述	类型	供应商
STPOWER MOSFET Finder	批量生产	用于安卓和iOS的MOSFET产品查找应用	查找器App	ST	STPOWER MOSFET Finder 描述: 用于安卓和iOS的MOSFET产品查找应用

All resources

产品规格 (1)

	Resource title		Latest update
PDF	DS10759 N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 8x8 HV package 5.0		01 Jan 1970	01 Jan 1970 DS10759 N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 8x8 HV package 5.0

应用手册 (5 of 9)

	Resource title	Latest update
PDF	AN4250 Fishbone diagram for power factor correction 1.1	01 Jan 1970	01 Jan 1970 AN4250 Fishbone diagram for power factor correction 1.1
PDF	AN4829 Fishbone diagrams for a forward converter 1.1	01 Jan 1970	01 Jan 1970 AN4829 Fishbone diagrams for a forward converter 1.1
PDF	AN4720 Half bridge resonant LLC converters and primary side MOSFET selection 1.0	01 Jan 1970	01 Jan 1970 AN4720 Half bridge resonant LLC converters and primary side MOSFET selection 1.0
PDF	AN4742 MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology 1.0	01 Jan 1970	01 Jan 1970 AN4742 MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology 1.0
PDF	AN4406 MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies 1.0	01 Jan 1970	01 Jan 1970 AN4406 MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies 1.0
PDF	AN2842 Paralleling of power MOSFETs in PFC topology 1.4	01 Jan 1970	01 Jan 1970 AN2842 Paralleling of power MOSFETs in PFC topology 1.4
PDF	AN2344 Power MOSFET avalanche characteristics and ratings 1.3	01 Jan 1970	01 Jan 1970 AN2344 Power MOSFET avalanche characteristics and ratings 1.3
PDF	AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0	01 Jan 1970	01 Jan 1970 AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0
PDF	AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1	01 Jan 1970	01 Jan 1970 AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

技术文档 (1)

	Resource title		Latest update
PDF	TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0		01 Jan 1970	01 Jan 1970 TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0

用户手册 (1)

	Resource title		Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs 1.3		01 Jan 1970	01 Jan 1970 UM1575 Spice model tutorial for Power MOSFETs 1.3

工具/软件相关的应用笔记 (1)

	Resource title		Latest update
PDF	AN3106 48 V - 130 W high-efficiency converter with PFC for LED street lighting applications 3.1		01 Jan 1970	01 Jan 1970 AN3106 48 V - 130 W high-efficiency converter with PFC for LED street lighting applications 3.1

宣传册 (5 of 6)

	Resource title	Latest update
PDF	300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0	01 Jan 1970	01 Jan 1970 300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
PDF	400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1	01 Jan 1970	01 Jan 1970 400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
PDF	500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET 1.0	01 Jan 1970	01 Jan 1970 500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET 1.0
PDF	600/650 V MDmesh™ M2 1.0	01 Jan 1970	01 Jan 1970 600/650 V MDmesh™ M2 1.0
PDF	ST MOSFET Finder, the new app for Android and iOS 1.0	01 Jan 1970	01 Jan 1970 ST MOSFET Finder, the new app for Android and iOS 1.0
PDF	STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series 1.0	01 Jan 1970	01 Jan 1970 STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series 1.0

手册 (1)

	Resource title		Latest update
PDF	Electric vehicle (EV) ecosystem 1.1		01 Jan 1970	01 Jan 1970 Electric vehicle (EV) ecosystem 1.1

EDA Symbols, Footprints and 3D Models

质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
STL25N60M2-EP	批量生产	PowerFLAT 8x8 HV	工业	Ecopack2	PDF XML

STL25N60M2-EP

Package:

PowerFLAT 8x8 HV

Material Declaration**:

PDF XML

More Info

Marketing Status

Package

PowerFLAT 8x8 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。

样片和购买

	产品型号	从分销商订购	从ST订购	供货状态	ECCN (US)	ECCN (EU)	包装类型	封装	温度（ºC）		Country of Origin	Budgetary Price (US$)*/Qty
	产品型号	从分销商订购	从ST订购	供货状态	ECCN (US)	ECCN (EU)	包装类型	封装	最小值	最大值	Country of Origin	Budgetary Price (US$)*/Qty
	STL25N60M2-EP	无法联系到经销商，请联系我们的销售办事处		批量生产	EAR99	NEC	Tape And Reel	PowerFLAT 8x8 HV	-	-	CHINA

STL25N60M2-EP

供货状态

批量生产

ECCN (US)

EAR99

更多信息

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tape And Reel

封装

PowerFLAT 8x8 HV

Operating Temperature (°C)

(最小值)

(最大值)

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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