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This high voltage N-channel Power MOSFET belongs to the MDmesh™ M8 series, based on the new ST trench super-junction technology. The resulting Power MOSFET exhibits very low RDS(on) x area, low gate charge (Qg) and low gate resistance (RG), making it suitable for the most demanding high efficiency converters.
主要特性
- Very low RDS(on) x area
- Extremely low gate charge and input capacitance
- Low gate resistance (RG)
- 100% avalanche tested
- High dv/dt ruggedness
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
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产品规格 (1)
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14 May 2018 |
14 May 2018
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21 Oct 2016
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13 Jun 2019 |
13 Jun 2019
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EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STL26N30M8 | 无法联系到经销商,请联系我们的销售办事处 |
批量生产
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EAR99 | NEC | Tape And Reel | PowerFLAT 5x6 | - | - | CHINA |
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty