STL285N4F7AG

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产品概述

描述

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

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Designed for automotive applications and AEC-Q101 qualified

Among the lowest R_DS(on) on the market

Excellent FoM (figure of merit)

Low C_rss/C_iss ratio for EMI immunity

High avalanche ruggedness

Wettable flank package
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LV Motor Control

Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications

Watch the video (18:18)

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	产品型号	状态	描述	类型	供应商
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