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STL3N10F7

Active
储存到myST

N-channel 100 V, 0.062 Ohm typ., 4 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package

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快速链接

  • 该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。

    主要特性

    • N-沟道增强模式
    • 低栅极电荷
    • 100 ％额定雪崩
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STL3N10F7 PowerFLAT 2x2 Tape And Reel
Active
0.8 1000 EAR99 CHINA 查看供货情况

Distributor availability ofSTL3N10F7

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 4888 1 Order Now
MOUSER WORLDWIDE 2556 1 Order Now

代理商库存报告日期: 2019-09-13

代理商名称

DIGIKEY

库存

4888

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

2556

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-09-13

Get sample

STL3N10F7

封装

PowerFLAT 2x2

包装类型

Tape And Reel
More Info

Unit Price (US$)

0.8*

Distributor availability ofSTL3N10F7

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 4888 1 Order Now
MOUSER WORLDWIDE 2556 1 Order Now

代理商库存报告日期: 2019-09-13

代理商名称

DIGIKEY

库存

4888

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

2556

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-09-13

供货状态

Active

Unit Price (US$)

0.8

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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开发工具硬件

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技术文档

    • 描述 版本 文档大小 操作
      		DS10186
      N-channel 100 V, 0.062 Ω typ., 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package       		2.0
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      		PDF
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      N-channel 100 V, 0.062 Ω typ., 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package

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    • 描述 版本 文档大小 操作
      		AN3267
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      		AN4789
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      		AN4191
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      1.45 MB
      		PDF
      		AN4390
      ST’s MOSFET technologies for uninterruptible power supplies       		1.1
      1.22 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      PDF
      AN4789

      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

      PDF
      AN4191

      Power MOSFET: Rg impact on applications

      PDF
      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		STL3N10F7 PSpice model 1.0
      3.92 KB
      		ZIP

      STL3N10F7 PSpice model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      776.14 KB
      		PDF
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      PDF

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      Electric vehicle (EV) ecosystem

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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STL3N10F7
Active
PowerFLAT 2x2 工业 Ecopack2

STL3N10F7

Package:

PowerFLAT 2x2

Material Declaration**:

PDF XML
More Info

Marketing Status

Active

Package

PowerFLAT 2x2

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.