STL3NM60N

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This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

主要特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
阅读更多阅读较少信息

样片和购买

产品型号

封装

包装类型

供货状态

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从分销商订购

从ST订购

STL3NM60N

PowerFLAT 3.3 x 3.3 HV

Tape And Reel

EAR99

MALAYSIA

查看供货情况

Distributor availability ofSTL3NM60N

代理商名称	地区	库存	最小订购量	Third party link
DIGIKEY	WORLDWIDE	7833	1	Order Now
MOUSER	WORLDWIDE	3790	1	Order Now
Farnell Element14	EUROPE	610	1	Order Now

代理商库存报告日期: 2019-12-06

代理商名称

DIGIKEY

库存

7833

Min.Order

地区

WORLDWIDE Order Now

MOUSER

库存

3790

Min.Order

地区

WORLDWIDE Order Now

Farnell Element14

库存

610

Min.Order

地区

EUROPE Order Now

代理商库存报告日期: 2019-12-06

获取样片

STL3NM60N

封装

PowerFLAT 3.3 x 3.3 HV

包装类型

Tape And Reel

More Info

单价(US$)

Distributor availability ofSTL3NM60N

代理商名称	地区	库存	最小订购量	Third party link
DIGIKEY	WORLDWIDE	7833	1	Order Now
MOUSER	WORLDWIDE	3790	1	Order Now
Farnell Element14	EUROPE	610	1	Order Now

代理商库存报告日期: 2019-12-06

代理商名称

DIGIKEY

库存

7833

Min.Order

地区

WORLDWIDE Order Now

MOUSER

库存

3790

Min.Order

地区

WORLDWIDE Order Now

Farnell Element14

库存

610

Min.Order

地区

EUROPE Order Now

代理商库存报告日期: 2019-12-06

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

开发工具硬件

软件开发工具
- Picture 产品型号
  
  制造商
  
  描述
  
  ST MOSFET Finder ST MOSFET product finder application for Android and iOS
  
  产品型号
  
  ST MOSFET Finder
  
  MOSFET product finder application for Android and iOS

Picture	产品型号	制造商	描述
	ST MOSFET Finder	ST	MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

产品规格
- 描述版本文档大小操作
  
  DS8889
  N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package 2.0
  860.22 KB
  PDF
  
  DS8889
  
  N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package
  
  PDF

	描述	版本	文档大小	操作
	DS8889 N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package	2.0	860.22 KB	PDF

应用手册

描述	版本	文档大小	操作
AN4250 Fishbone diagram for power factor correction	1.1	772.32 KB	PDF
AN1703 Guidelines for using ST's MOSFET smd Packages	1.3	776.65 KB	PDF
AN2842 Paralleling of power MOSFETs in PFC topology	1.4	896.91 KB	PDF
AN2344 Power MOSFET avalanche characteristics and ratings	1.3	880.04 KB	PDF
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	347.01 KB	PDF

AN4250

Fishbone diagram for power factor correction

PDF

AN1703

Guidelines for using ST's MOSFET smd Packages

PDF

AN2842

Paralleling of power MOSFETs in PFC topology

PDF

AN2344

Power MOSFET avalanche characteristics and ratings

PDF

AN4337

The avalanche issue: comparing the impacts of the IAR and EAS parameters

PDF

技术文档

	描述	版本	文档大小	操作
	TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products	1.0	657.71 KB	PDF

TN1156

Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

PDF

用户手册
- 描述版本文档大小操作
  
  UM1575
  Spice model tutorial for Power MOSFETs 1.3
  1.51 MB
  PDF
  
  UM1575
  
  Spice model tutorial for Power MOSFETs
  
  PDF

	描述	版本	文档大小	操作
	UM1575 Spice model tutorial for Power MOSFETs	1.3	1.51 MB	PDF

硬件型号、CAD库及SVD

	描述	版本	文档大小	操作
	STL3NM60N PSpice model	1.0	4.16 KB	ZIP

产品型号	供货状态	封装	等级规格	符合RoHS级别	Material Declaration**
STL3NM60N	批量生产	PowerFLAT 3.3 x 3.3 HV	工业	Ecopack2

STL3NM60N

Package:

PowerFLAT 3.3 x 3.3 HV

Material Declaration**:

More Info

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.