N-channel 600 V, 1.5 Ohm, 2.2 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 3.3 x 3.3 HV package

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  • This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

    主要特性

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STL3NM60N PowerFLAT 3.3 x 3.3 HV Tape And Reel
批量生产
- - EAR99 MALAYSIA 查看供货情况

Distributor availability ofSTL3NM60N

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 7833 1 Order Now
MOUSER WORLDWIDE 3790 1 Order Now
Farnell Element14 EUROPE 610 1 Order Now

代理商库存报告日期: 2019-12-06

代理商名称

DIGIKEY

库存

7833

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

3790

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

610

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-12-06

获取样片

STL3NM60N

封装

PowerFLAT 3.3 x 3.3 HV

包装类型

Tape And Reel

单价(US$)

*

Distributor availability ofSTL3NM60N

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 7833 1 Order Now
MOUSER WORLDWIDE 3790 1 Order Now
Farnell Element14 EUROPE 610 1 Order Now

代理商库存报告日期: 2019-12-06

代理商名称

DIGIKEY

库存

7833

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

3790

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

610

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-12-06

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

MALAYSIA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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技术文档

    • 描述 版本 文档大小 操作
      DS8889
      N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package
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      N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package

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      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
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      AN4250

      Fishbone diagram for power factor correction

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      Guidelines for using ST's MOSFET smd Packages

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

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      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
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      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

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      UM1575
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      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STL3NM60N PSpice model 1.0
      4.16 KB
      ZIP

      STL3NM60N PSpice model

产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
STL3NM60N
批量生产
PowerFLAT 3.3 x 3.3 HV 工业 Ecopack2

STL3NM60N

Package:

PowerFLAT 3.3 x 3.3 HV

Material Declaration**:

Marketing Status

批量生产

Package

PowerFLAT 3.3 x 3.3 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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