产品概述
描述
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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所有功能
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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特别推荐
All tools & software
EDA符号、封装和3D模型
全部资源
Resource title | 版本 | Latest update |
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SPICE models (1)
Resource title | 版本 | Latest update | ||
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ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
样片和购买
产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STL3NM60N | distributors 无法联系到经销商,请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | PowerFLAT 3.3x3.3 HV | - | - | MALAYSIA | |