This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ V (P-channel) and STripFET™ VI DeepGATE™ (N-channel) technologies. The resulting device exhibits low on-state resistance and an FOM among the lowest in its voltage class.
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
|PowerFLAT 5x6 double island||工业||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.