This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
- AEC-Q101 qualified
- Low on-resistance
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package
|PowerFLAT 5x6 double island WF||汽车||Ecopack2|
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