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This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
主要特性
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
样片和购买
| 产品型号 | 封装 | 包装类型 | 供货状态 | 预算价格(US$) | 数量 | ECCN (US) | Country of Origin | 从分销商订购 | 从ST订购 |
|---|---|---|---|---|---|---|---|---|---|
| STL45P3LLH6 | PowerFLAT 5x6 | Tape And Reel |
Active
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1.05 | 1000 | EAR99 | CHINA | No availability of distributors reported, please contact our sales office | 立即购买 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
精选 视频
开发工具硬件
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Picture 产品型号 制造商 描述 ST MOSFET Finder ST MOSFET product finder application for Android and iOS 产品型号MOSFET product finder application for Android and iOS
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| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
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| STL45P3LLH6 |
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PowerFLAT 5x6 | 工业 | Ecopack2 |
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STL45P3LLH6
Package:
PowerFLAT 5x6Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
