STL4LN80K5

批量生产

N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

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  • This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    主要特性

    • Industry’s lowest RDS(on) * area
    • Industry’s best FoM (figure of merit)
    • Ultra low-gate charge
    • 100 % avalanche tested
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
从ST订购
从分销商订购
STL4LN80K5 PowerFLAT 5x6 VHV Tape And Reel
批量生产
EAR99 CHINA 没有经销商,请联系我们的销售办事处

STL4LN80K5

封装

PowerFLAT 5x6 VHV

包装类型

Tape And Reel

Budgetary Price (US$)*/Qty

供货状态

批量生产

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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技术文档

    • 描述 版本 文档大小 操作
      DS11030
      N-channel 800 V, 2.1 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package
      2.0
      864.47 KB
      PDF
      DS11030

      N-channel 800 V, 2.1 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF
      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series 1.0
      516.44 KB
      PDF
      800-1700 V MDmesh K5: Very high voltage super-junction Power MOSFET series 1.0
      477.67 KB
      PDF
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
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      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series

      800-1700 V MDmesh K5: Very high voltage super-junction Power MOSFET series

      ST MOSFET Finder, the new app for Android and iOS

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
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      Electric vehicle (EV) ecosystem

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STL4LN80K5
批量生产
PowerFLAT 5x6 VHV Industrial Ecopack2

STL4LN80K5

Package:

PowerFLAT 5x6 VHV

Material Declaration**:

Marketing Status

批量生产

Package

PowerFLAT 5x6 VHV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持