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STL4P3LLH6

批量生产
储存到myST

P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in PowerFLAT(TM) 2x2 package

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  • This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key Features

    • Very low on-resistance RDS(on)
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STL4P3LLH6 PowerFLAT 2x2 Tape And Reel
批量生产
0.55 1000 EAR99 CHINA 查看供货情况

Distributor availability ofSTL4P3LLH6

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 4662 1 Order Now

代理商库存报告日期: 2019-11-17

代理商名称

MOUSER

库存

4662

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-11-17

获取样片

STL4P3LLH6

封装

PowerFLAT 2x2

包装类型

Tape And Reel
More Info

单价(US$)

0.55*

Distributor availability ofSTL4P3LLH6

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 4662 1 Order Now

代理商库存报告日期: 2019-11-17

代理商名称

MOUSER

库存

4662

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-11-17

供货状态

批量生产

单价(US$)

0.55

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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技术文档

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      		DS9650
      P-channel 30 V, 0.048 Ω typ., 4 A STripFET™ H6 DeepGATE™ Power MOSFET in PowerFLAT™ 2x2 package       		2.0
      760.41 KB
      		PDF
      DS9650

      P-channel 30 V, 0.048 Ω typ., 4 A STripFET™ H6 DeepGATE™ Power MOSFET in PowerFLAT™ 2x2 package

      PDF
    • 描述 版本 文档大小 操作
      		AN4391
      New P-channel trench technology from ST for low power DC-DC conversions and load switching applications       		1.0
      1.6 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN4391

      New P-channel trench technology from ST for low power DC-DC conversions and load switching applications

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
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      Spice model tutorial for Power MOSFETs

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
STL4P3LLH6
批量生产
PowerFLAT 2x2 工业 Ecopack2

STL4P3LLH6

Package:

PowerFLAT 2x2

Material Declaration**:

More Info

Marketing Status

批量生产

Package

PowerFLAT 2x2

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.