STL65DN3LLH5

已停产

双路N沟道30 V、0.0059 Ohm典型值、19 A STripFET H5功率MOSFET,PowerFLAT 5x6双岛封装

下载数据手册
概述
样片和购买
解决方案
资源
工具与软件
质量与可靠性
eDesignSuite
开始
Partner products
Sales Briefcase
  • This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

    主要特性

    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • Very low switching gate charge
    • High avalanche ruggedness
    • Low gate drive power losses
00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS7061
      Dual N-channel 30 V, 0.0059 Ω, 19 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET
      1.1
      511.12 KB
      PDF
      DS7061

      Dual N-channel 30 V, 0.0059 Ω, 19 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET