Product overview
描述
该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。-
All features
- N-沟道增强模式
- 与上一代相比，具有更低的R x 面积值
- 100 ％额定雪崩
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
All tools & software
All resources
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产品规格 (1)
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (4)
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手册 (1)
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| 23 Mar 2020 |
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL7N10F7
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STL7N10F7 | 2 distributors |
批量生产
|
EAR99 | NEC | Tape And Reel | PowerFLAT 3.3x3.3 | - | - | CHINA | 0.376 / 1k | ||
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
0.376 / 1k