产品概述
描述
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.-
所有功能
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
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Resource title | 版本 | Latest update |
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SPICE models (1)
Resource title | 版本 | Latest update | ||
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ZIP | 1.0 | 11 Dec 2020 | 11 Dec 2020 |