Product overview
描述
该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。-
All features
- 处于市面上最低的 RDS(on)行列
- 出色的品质因数（FoM）
- 较低的 Crss/Ciss 比值使得其具有更强的抗EMI能力
- 坚固的抗雪崩能力
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
All tools & software
All resources
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产品规格 (1)
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| 29 Oct 2015 |
29 Oct 2015
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应用手册 (5)
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (4)
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| 22 Feb 2021 |
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| 13 Jun 2019 |
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手册 (1)
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| 23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL8N6F7
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
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硬件型号、CAD库及SVD (1)
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| ZIP | 23 Mar 2016 |
23 Mar 2016
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