STL8N6F7

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产品概述

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该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。

所有功能
处于市面上最低的 R_DS(on)行列

出色的品质因数（FoM）

较低的 C_rss/C_iss 比值使得其具有更强的抗EMI能力

坚固的抗雪崩能力
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LV Motor Control

Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications

Watch the video (18:18)

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