产品概述
描述
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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所有功能
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package
EDA符号、封装和3D模型
全部资源
资源标题 | 版本 | 更新时间 |
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SPICE models (1)
资源标题 | 版本 | 更新时间 | ||
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ZIP | 1.0 | 08 Oct 2018 | 08 Oct 2018 |
样片和购买
产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STLD257N4F7AG | distributors 无法联系到经销商,请联系我们的销售办事处 | NRND | EAR99 | NEC | Tape and Reel | PowerFLAT 5x6 Dual Side Cooling | - | - | CHINA | |
STLD257N4F7AG NRND