STN1NK60ZL

批量生产

N-channel 600 V, 10 Ohm typ., 0.44 A Zener-protected SuperMESH(TM) Power MOSFET in SOT-223 package

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  • This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

    主要特性

    • 100% avalanche tested
    • Extremely high dv/dt capability
    • Gate charge minimized
    • ESD improved capability

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
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从分销商订购
从ST订购
STN1NK60ZL SOT-223 Tape And Reel
批⁠量⁠生⁠产
- - EAR99 CHINA 没有经销商,请联系我们的销售办事处

STN1NK60ZL

封装

SOT-223

包装类型

Tape And Reel

单价(US$)

*

供货状态

批⁠量⁠生⁠产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

精选 产品

适合您的资源

Mobile Applications

    • 产品型号

      STPOWER MOSFET product finder mobile app for tablets and smartphones

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS10400
      N-channel 600 V, 10.4 Ω typ., 0.44 A SuperMESH™ Power MOSFET in a SOT-223 package
      2.0
      703.49 KB
      PDF
      DS10400

      N-channel 600 V, 10.4 Ω typ., 0.44 A SuperMESH™ Power MOSFET in a SOT-223 package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STN1NK60ZL
批量生产
SOT-223 Industrial Ecopack2

STN1NK60ZL

Package:

SOT-223

Material Declaration**:

Marketing Status

批量生产

Package

SOT-223

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

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