Product overview
描述
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.-
All features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
精选 视频
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
Available in 10 different RDS(on) values and 9 packages
All tools & software
All resources
| Resource title | Latest update |
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产品规格 (1)
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| 07 Feb 2018 |
07 Feb 2018
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应用手册 (1)
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| 13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
| Resource title | Latest update | |||
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STN3P10F6
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Symbols
Footprints
3D models
