产品概述
描述
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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所有功能
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
特别推荐
EDA符号、封装和3D模型
样片和购买
产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STN3P10F6 | distributors 无法联系到经销商,请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | SOT-223 | - | - | CHINA | |