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STO36N60M6

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N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-LL package

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快速链接

  • 新型MDmesh™M6技术融合了众所周知的MDmesh™系列中SuperJunction MOSFET的最新技术。 意法半导体在其上一代MDmesh™器件技术基础上构建了新型M6工艺， 不仅改进了RDS(on) 密度，同时提升了开关特性，为实现更高的应用效率提供了友好的用户体验。

    主要特性

    •  减少开关损耗
    • 与上一代相比，具有更低的面积值
    • 低栅极输入电阻
    • 经过100％雪崩测试
    • 稳压保护
    • 强爬电距离封装
    •  分离驱动源极引脚使其具有出色的开关性能
    阅读更多 阅读较少信息

样片和购买

产品型号
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包装类型
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ECCN (US)
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STO36N60M6 TO-LL Tape And Reel
Active
3.5 - EAR99 MALAYSIA 查看供货情况

Distributor availability ofSTO36N60M6

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 7 1 Order Now

代理商库存报告日期: 2019-08-08

代理商名称

MOUSER

库存

7

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-08-08

立即购买

STO36N60M6

封装

TO-LL

包装类型

Tape And Reel
More Info

Unit Price (US$)

3.5*

Distributor availability ofSTO36N60M6

代理商名称
地区 库存 最小订购量 Third party link
MOUSER WORLDWIDE 7 1 Order Now

代理商库存报告日期: 2019-08-08

代理商名称

MOUSER

库存

7

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-08-08

供货状态

Active

Unit Price (US$)

3.5

数量

-

ECCN (US)

EAR99

Country of Origin

MALAYSIA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

精选 视频

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900 V MDmesh K5 MOSFETs
900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

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Getting started with eDesignSuite

The smart way to design your application

800 V MDmesh K5 MOSFETs
800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

精选 产品

Power MOSFETs

Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.

Super-junction high-voltage MOSFETs for resonant topologies

The MDmesh M6 MOSFET series (600 V to 700 V) opens the door to power converter designers for new scenarios targeting high efficiency and power density.

适合您的资源

开发工具硬件

    • 产品型号
      ST MOSFET Finder

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • Description 版本 文档大小 操作
      		DS12120
      N-channel 600 V, 85 mΩ typ., 30 A, MDmesh™ M6 Power MOSFET in a TO‑LL HV package       		2.0
      534.22 KB
      		PDF
      DS12120

      N-channel 600 V, 85 mΩ typ., 30 A, MDmesh™ M6 Power MOSFET in a TO‑LL HV package

      PDF
    • Description 版本 文档大小 操作
      		AN4250
      Fishbone diagram for power factor correction       		1.1
      772.32 KB
      		PDF
      		AN2842
      Paralleling of power MOSFETs in PFC topology       		1.4
      896.91 KB
      		PDF
      		AN2344
      Power MOSFET avalanche characteristics and ratings       		1.3
      880.04 KB
      		PDF
      		AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies       		1.0
      1.09 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN4250

      Fishbone diagram for power factor correction

      PDF
      AN2842

      Paralleling of power MOSFETs in PFC topology

      PDF
      AN2344

      Power MOSFET avalanche characteristics and ratings

      PDF
      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • Description 版本 文档大小 操作
      		TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products       		1.0
      657.71 KB
      		PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

      PDF
    • Description 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • Description 版本 文档大小 操作
      		sto36n60m6 Pspice Model 1.0
      5.3 KB
      		ZIP

      sto36n60m6 Pspice Model

      ZIP

出版刊物和宣传资料

    • Description 版本 文档大小 操作
      		600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency 1.0
      760.45 KB
      		PDF

      600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STO36N60M6
Active
TO-LL 工业 Ecopack2

STO36N60M6

Package:

TO-LL

Material Declaration**:

More Info

Marketing Status

Active

Package

TO-LL

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.