STO36N60M6

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产品概述

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新型MDmesh™M6技术融合了众所周知的MDmesh™系列中SuperJunction MOSFET的最新技术。意法半导体在其上一代MDmesh™器件技术基础上构建了新型M6工艺，不仅改进了R_DS(on) 密度，同时提升了开关特性，为实现更高的应用效率提供了友好的用户体验。

所有功能
 减少开关损耗

与上一代相比，具有更低的面积值

低栅极输入电阻

经过100％雪崩测试

稳压保护

强爬电距离封装

 分离驱动源极引脚使其具有出色的开关性能
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600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

观看视频 (02:29)

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	产品型号	状态	描述	类型	供应商
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