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STO47N60M6

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N沟道600 V、70 mOhm典型值、36 A MDmesh M6功率MOSFET，TO-LL封装

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样片和购买
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质量与可靠性
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产品概述

描述

新型MDmesh™ M6技术融合了众所周知的MDmesh系列中SJ MOSFET的最新技术。意法半导体在其上一代MDmesh器件技术基础上构建了新型M6工艺，不仅改进了RDS(on) 密度，同时提升了开关特性，为实现更高的应用效率提供了友好的用户体验。

  • 所有功能

    • 降低了开关损耗
    • 与上一代相比，具有更低的面积值
    • 低栅极输入电阻
    • 经过100％雪崩测试
    • 稳压保护
    • 高沿面封装
    • 分离驱动源极引脚使其具有出色的开关性能
    阅读更多 阅读较少信息

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特别推荐

All tools & software

    • 产品型号
      		状态
      		描述
      		类型
      		供应商

      STPOWER MOSFET Finder

      批量生产

      用于安卓和iOS的MOSFET产品查找应用

      		 查找器App ST
      STPOWER MOSFET Finder

      描述:

      用于安卓和iOS的MOSFET产品查找应用

All resources

Expand all categories
Resource title
Latest update

产品规格 (1)

Resource title
Latest update
DS12393 N-channel 600 V, 70 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑LL package 3.0
05 May 2021
05 May 2021
DS12393 N-channel 600 V, 70 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑LL package 3.0

应用手册 (5)

Resource title
Latest update
AN4250 Fishbone diagram for power factor correction 1.1
13 Sep 2018
13 Sep 2018
AN4250 Fishbone diagram for power factor correction 1.1
AN2842 Paralleling of power MOSFETs in PFC topology 1.4
13 Sep 2018
13 Sep 2018
AN2842 Paralleling of power MOSFETs in PFC topology 1.4
AN2344 Power MOSFET avalanche characteristics and ratings 1.3
13 Sep 2018
13 Sep 2018
AN2344 Power MOSFET avalanche characteristics and ratings 1.3
AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0
18 Apr 2019
18 Apr 2019
AN5318 Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies 1.0
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1
13 Sep 2018
13 Sep 2018
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

技术文档 (1)

Resource title
Latest update
TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0
13 Nov 2016
13 Nov 2016
TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0

用户手册 (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5 of 6)

Resource title
Latest update
300-1200 V MDmesh 1.0
22 Feb 2021
22 Feb 2021
300-1200 V MDmesh 1.0
400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
05 Jun 2020
05 Jun 2020
400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency 1.0
03 Apr 2019
03 Apr 2019
600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency 1.0
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER MOSFET MDmesh™ M6 600 to 700 V Super Junction MOSFETs to boost the efficiency 1.0
03 Jun 2020
03 Jun 2020
STPOWER MOSFET MDmesh™ M6 600 to 700 V Super Junction MOSFETs to boost the efficiency 1.0
STPOWER MOSFETs in the innovative TO-LL The latest evolution in SMD power packages 1.0
06 Oct 2020
06 Oct 2020
STPOWER MOSFETs in the innovative TO-LL The latest evolution in SMD power packages 1.0
Load more

手册 (1)

Resource title
Latest update
TO-LL: the latest evolution in SMD power packages STPOWER MOSFET SJ MDmesh M6 and DM6 1.0
24 Jul 2020
24 Jul 2020
TO-LL: the latest evolution in SMD power packages STPOWER MOSFET SJ MDmesh M6 and DM6 1.0

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STO47N60M6

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

All resources

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Resource title
Latest update

SPICE models (1)

Resource title
Latest update
sto47n60m6 pSpice Model 1.0
08 Apr 2019
08 Apr 2019
sto47n60m6 pSpice Model 1.0

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STO47N60M6
批量生产
TO-LL 工业 Ecopack2

STO47N60M6

Package:

TO-LL

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

TO-LL

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STO47N60M6 Available at 1 distributors

经销商的可用性STO47N60M6

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 1880 1 马上订购

代理商库存报告日期: 2021-05-12

代理商名称

DIGIKEY

库存

1880

Min.Order

1

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2021-05-12

批量生产
EAR99 NEC Tape And Reel TO-LL - - MALAYSIA 4.1 / 1k

STO47N60M6

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

4.1 / 1k

经销商的可用性STO47N60M6

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 1880 1 马上订购

代理商库存报告日期: 2021-05-12

代理商名称

DIGIKEY

库存

1880

Min.Order

1

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2021-05-12

ECCN (EU)

NEC

包装类型

Tape And Reel

封装

TO-LL

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

4.1 / 1k

Country of Origin

MALAYSIA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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