产品概述
描述
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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所有功能
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
- High-creepage package
- Excellent switching performance thanks to the extra driving source pin
EDA符号、封装和3D模型
STMicroelectronics - STO52N60DM6
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符号
封装
3D模型
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STO52N60DM6 | distributors 无法联系到经销商，请联系我们的销售办事处 | NRND | EAR99 | NEC | Tape and Reel | TO-LL | - | - | MALAYSIA | | ||
distributors
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