产品概述
描述
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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所有功能
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STP105N3LL
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符号
封装
3D模型
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STP105N3LL | | | distributors 无法联系到经销商，请联系我们的销售办事处 | TO-220 | Tube | CHINA | EAR99 | NEC | - | - | - | |||
STP105N3LL 批量生产
Budgetary Price (US$)*/Qty:
-
distributors
无法联系到经销商，请联系我们的销售办事处
封装:
TO-220
包装类型:
Tube
RoHS:
-
Country of Origin:
CHINA
ECCN (US):
EAR99
ECCN (EU):
NEC
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