搜索
取消
搜索历史
收藏

Please log in  to show your saved searches.

STP105N3LL

批量生产
储存到myST

N沟道30 V、2.7 mOhm典型值、150 A STripFET H6功率MOSFET，TO-220封装

下载数据手册
概述
样片和购买
解决方案
Documentation
CAD Resources
工具与软件
质量与可靠性
eDesignSuite
开始
Partner products
Sales Briefcase

  • This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    主要特性

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    阅读更多 阅读较少信息

精选 视频

查看全部
900 V MDmesh K5 MOSFETs
900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Getting started with eDesignSuite
Getting started with eDesignSuite

The smart way to design your application

800 V MDmesh K5 MOSFETs
800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

精选 产品

Power MOSFETs

Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.

Low-voltage MOSFETs

Discover our low-voltage MOSFET portfolio, ranging from 12 V to 30 V, for a large diversity of industrial and automotive applications.

适合您的资源

All tools & software

All resources

产品规格 (1)

Resource title
Latest update
DS9382 N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package 3.0
21 Oct 2020
21 Oct 2020
DS9382 N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package 3.0

应用手册 (5)

Resource title
Latest update
AN1506 A motor drives system for wheelchair applications 1.2
13 Sep 2018
13 Sep 2018
AN1506 A motor drives system for wheelchair applications 1.2
AN3267 Impact of power MOSFET VGS on buck converter performance 1.2
13 Sep 2018
13 Sep 2018
AN3267 Impact of power MOSFET VGS on buck converter performance 1.2
AN4191 Power MOSFET: Rg impact on applications 1.2
07 Jan 2019
07 Jan 2019
AN4191 Power MOSFET: Rg impact on applications 1.2
AN4192 Power MOSFETs: best choice guide for VRM application 1.0
13 Sep 2018
13 Sep 2018
AN4192 Power MOSFETs: best choice guide for VRM application 1.0
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1
13 Sep 2018
13 Sep 2018
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

用户手册 (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (1)

Resource title
Latest update
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0

CAD/EDA Symbols, Footprints and Models

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STP105N3LL
批量生产
TO-220AB 工业 Ecopack2

STP105N3LL

Package:

TO-220AB

Material Declaration**:

More Info

Marketing Status

批量生产

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STP105N3LL 没有经销商，请联系我们的销售办事处
批量生产
EAR99 NEC Tube TO-220AB - - CHINA

STP105N3LL

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

TO-220AB

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。