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This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
主要特性
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
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产品规格 (1)
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| 07 Jul 2015 |
07 Jul 2015
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| 08 May 2020 |
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP105N3LL
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STP105N3LL |
批量生产
|
TO-220AB | 工业 | Ecopack2 |
|
STP105N3LL
Package:
TO-220ABMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STP105N3LL | 1 distributors |
批量生产
|
EAR99 | NEC | Tube | TO-220AB | - | - | CHINA | |||
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
