Product overview
描述
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.-
All features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
精选 视频
All tools & software
All resources
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产品规格 (1)
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17 Oct 2016 |
17 Oct 2016
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应用手册 (4)
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13 Sep 2018 |
13 Sep 2018
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07 Jan 2019 |
07 Jan 2019
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08 Nov 2019 |
08 Nov 2019
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13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
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21 Oct 2016 |
21 Oct 2016
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宣传册 (4)
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22 Feb 2021 |
22 Feb 2021
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25 Sep 2019 |
25 Sep 2019
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08 May 2020 |
08 May 2020
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13 Jun 2019 |
13 Jun 2019
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EDA Symbols, Footprints and 3D Models
All resources
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硬件型号、CAD库及SVD (1)
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ZIP | 23 Sep 2015 |
23 Sep 2015
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STP110N7F6 | 3 distributors | Buy Direct |
NRND
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EAR99 | NEC | Tube | TO-220AB | - | - | CHINA |