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STP12N65M2

批量生产
储存到myST

N沟道650 V、0.42 Ohm典型值、8 A MDmesh M2功率MOSFET，TO-220封装

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概述
样片和购买
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工具与软件
质量与可靠性
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快速链接

  • This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    主要特性

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected
    阅读更多 阅读较少信息

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900 V MDmesh K5 MOSFETs
900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Getting started with eDesignSuite
Getting started with eDesignSuite

The smart way to design your application

800 V MDmesh K5 MOSFETs
800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

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Power MOSFETs

Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.

MDmesh M2 series of super-junction MOSFETs

From 400 V to 650 V. Discover our broad range of N-channel super-junction power MOSFETs.

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技术文档

    • 描述 版本 文档大小 操作
      		DS12397
      N-channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220 package       		1.0
      671.69 KB
      		PDF
      DS12397

      N-channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220 package

      PDF
    • 描述 版本 文档大小 操作
      		AN4250
      Fishbone diagram for power factor correction       		1.1
      772.32 KB
      		PDF
      		AN4829
      Fishbone diagrams for a forward converter       		1.1
      1.35 MB
      		PDF
      		AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection       		1.0
      1.4 MB
      		PDF
      		AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology       		1.0
      1.29 MB
      		PDF
      		AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies       		1.0
      652.78 KB
      		PDF
      		AN2842
      Paralleling of power MOSFETs in PFC topology       		1.4
      896.91 KB
      		PDF
      		AN2344
      Power MOSFET avalanche characteristics and ratings       		1.3
      880.04 KB
      		PDF
      		AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies       		1.0
      1.09 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN4250

      Fishbone diagram for power factor correction

      PDF
      AN4829

      Fishbone diagrams for a forward converter

      PDF
      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      PDF
      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      PDF
      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      PDF
      AN2842

      Paralleling of power MOSFETs in PFC topology

      PDF
      AN2344

      Power MOSFET avalanche characteristics and ratings

      PDF
      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products       		1.0
      657.71 KB
      		PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      		PDF
      		400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
      203.54 KB
      		PDF
      		500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET 1.0
      145.61 KB
      		PDF
      		600/650 V MDmesh™ M2 1.0
      788.16 KB
      		PDF
      		ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      		PDF
      		STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series 1.0
      707.88 KB
      		PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      PDF

      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode

      PDF

      500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET

      PDF

      600/650 V MDmesh™ M2

      PDF

      ST MOSFET Finder, the new app for Android and iOS

      PDF

      STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series

      PDF
    • 描述 版本 文档大小 操作
      		Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      		PDF

      Electric vehicle (EV) ecosystem

      PDF

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STP12N65M2
批量生产
TO-220AB 工业 Ecopack2

STP12N65M2

Package:

TO-220AB

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STP12N65M2 Available at 1 distributors

...的经销商可用性STP12N65M2

代理商名称
地区 库存 最小订购量 第三方链接
MOUSER WORLDWIDE 60 1 马上订购

代理商库存报告日期: 2020-08-02

代理商名称

MOUSER

库存

60

Min.Order

1

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2020-08-02

样片和购买 立即购买
批量生产
EAR99 NEC Tube TO-220AB - - CHINA

STP12N65M2

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

...的经销商可用性STP12N65M2

代理商名称
地区 库存 最小订购量 第三方链接
MOUSER WORLDWIDE 60 1 马上订购

代理商库存报告日期: 2020-08-02

代理商名称

MOUSER

库存

60

Min.Order

1

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2020-08-02

ECCN (EU)

NEC

包装类型

Tube

封装

TO-220AB

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。