STP12N65M5

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Design Win

N沟道650 V、0.39 Ohm典型值、8.5 A MDmesh M5功率MOSFET,TO-220封装

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产品概述

描述

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.

EDA符号、封装和3D模型

STMicroelectronics - STP12N65M5

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