STP13N60M2

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产品概述

描述

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q_g. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

所有功能
Extremely low gate charge

Lower R_DS(on)x area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected
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600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

Watch the video (02:29)

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	产品型号	状态	描述	类型	供应商
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