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STP13N60M2

批量生产
储存到myST

N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

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样片和购买
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样片和购买
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快速链接

  • These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

    主要特性

    • Extremely low gate charge
    • Lower RDS(on)x area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Approximate Price (US$)* / Qty
从ST订购
从分销商订购
STP13N60M2 TO-220AB Tube
批⁠量⁠生⁠产
EAR99 CHINA 获取样片 查看供货情况

...的经销商可用性STP13N60M2

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 955 1 马上订购
Newark Element14 AMERICA 224 0 马上订购
MOUSER WORLDWIDE 1024 1 马上订购

代理商库存报告日期: 2020-04-06

代理商名称

DIGIKEY

库存

955

Min.Order

1

地区

WORLDWIDE 马上订购

Newark Element14

库存

224

Min.Order

0

地区

AMERICA 马上订购

MOUSER

库存

1024

Min.Order

1

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2020-04-06

STP13N60M2

封装

TO-220AB

包装类型

Tube
更多信息

Approximate Price (US$)* / Qty

...的经销商可用性STP13N60M2

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 955 1 马上订购
Newark Element14 AMERICA 224 0 马上订购
MOUSER WORLDWIDE 1024 1 马上订购

代理商库存报告日期: 2020-04-06

代理商名称

DIGIKEY

库存

955

Min.Order

1

地区

WORLDWIDE 马上订购

Newark Element14

库存

224

Min.Order

0

地区

AMERICA 马上订购

MOUSER

库存

1024

Min.Order

1

地区

WORLDWIDE 马上订购

代理商库存报告日期: 2020-04-06

供货状态

批⁠量⁠生⁠产

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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      STPOWER MOSFET Finder

      STPOWER MOSFET finder mobile app for tablets and smartphones

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技术文档

    • 描述 版本 文档大小 操作
      		DS9368
      N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages       		5.0
      1.23 MB
      		PDF
      DS9368

      N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages

      PDF
    • 描述 版本 文档大小 操作
      		AN4250
      Fishbone diagram for power factor correction       		1.1
      772.32 KB
      		PDF
      		AN4829
      Fishbone diagrams for a forward converter       		1.1
      1.35 MB
      		PDF
      		AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection       		1.0
      1.4 MB
      		PDF
      		AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology       		1.0
      1.29 MB
      		PDF
      		AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies       		1.0
      652.78 KB
      		PDF
      		AN2842
      Paralleling of power MOSFETs in PFC topology       		1.4
      896.91 KB
      		PDF
      		AN2344
      Power MOSFET avalanche characteristics and ratings       		1.3
      880.04 KB
      		PDF
      		AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies       		1.0
      1.09 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN4250

      Fishbone diagram for power factor correction

      PDF
      AN4829

      Fishbone diagrams for a forward converter

      PDF
      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      PDF
      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      PDF
      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      PDF
      AN2842

      Paralleling of power MOSFETs in PFC topology

      PDF
      AN2344

      Power MOSFET avalanche characteristics and ratings

      PDF
      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • 描述 版本 文档大小 操作
      		TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products       		1.0
      657.71 KB
      		PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

      PDF
    • 描述 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      		STP13N60M2 PSpice model 1.0
      9.76 KB
      		ZIP

      STP13N60M2 PSpice model

      ZIP

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      		300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      		PDF
      		500/650 V MDmesh™ M2 1.0
      1.03 MB
      		PDF
      		600/650 V MDmesh™ M2 1.0
      788.16 KB
      		PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      PDF

      500/650 V MDmesh™ M2

      PDF

      600/650 V MDmesh™ M2

      PDF
    • 描述 版本 文档大小 操作
      		Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      		PDF

      Electric vehicle (EV) ecosystem

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STP13N60M2
批量生产
TO-220AB Industrial Ecopack2

STP13N60M2

Package:

TO-220AB

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

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