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This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.
主要特性
- Ultra low on-resistance
- 100% avalanche tested
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
All tools & software
All resources
产品规格 (1)
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19 Sep 2016 |
19 Sep 2016
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应用手册 (4)
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08 Nov 2019
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13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
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21 Oct 2016 |
21 Oct 2016
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宣传册 (4)
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22 Jan 2020
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25 Sep 2019 |
25 Sep 2019
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08 May 2020 |
08 May 2020
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13 Jun 2019 |
13 Jun 2019
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EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STP180N10F3 | 2 distributors |
批量生产
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EAR99 | NEC | Tube | TO-220AB | - | - | CHINA | 2.82 / 1k |
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty
2.82 / 1k