This fully clamped Power MOSFET is manufactured using an advanced mesh overlay process which is based on an innovative strip layout. The benefits of this technology, coupled with the extra clamping capabilities render this device particularly suitable for the harshest operating conditions, such as those associated with the automotive environment. The device is also suitable for other applications that require a high degree of ruggedness.
- Low capacitance and gate charge
- 100% avalanche tested
- 175 °C maximum junction temperature
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Discover our medium-voltage N-channel power MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications.
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.