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These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
主要特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
精选 视频
All tools & software
All resources
产品规格 (1)
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19 Sep 2016
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应用手册 (4)
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技术文档 (1)
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宣传册 (3)
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EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STP18NM80 | 5 distributors | Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-220AB | - | - | CHINA |