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These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
主要特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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产品规格 (1)
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP18NM80
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
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3D models
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
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| 最小值 | 最大值 | |||||||||||
| STP18NM80 | 5 distributors | Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-220AB | - | - | CHINA | ||
