STP20N60M2-EP

已停产
Design Win

N沟道600 V、0.230 Ohm典型值、13 A MDmesh M2 EP功率MOSFET,TO-220封装

下载数据手册

产品概述

描述

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

  • 所有功能

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • Very low turn-off switching losses
    • 100% avalanche tested
    • Zener-protected

EDA符号、封装和3D模型

STMicroelectronics - STP20N60M2-EP

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型