概述
工具与软件
资源
解决方案
质量与可靠性
Sales Briefcase
eDesignSuite
开始
样片和购买
Partner products
  • The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

    主要特性

    • Reduced switching losses
    • Lower RDS(on) per area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STP22N60M6 TO-220AB Tube
批量生产
- - EAR99 CHINA 没有经销商,请联系我们的销售办事处

STP22N60M6

封装

TO-220AB

包装类型

Tube

单价(US$)

*

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

精选 产品

适合您的资源

开发工具硬件

    • 产品型号

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS12818
      N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a TO-220 package
      1.0
      448 KB
      PDF
      DS12818

      N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a TO-220 package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STP22N60M6 Pspice Model 1.0
      5.42 KB
      ZIP

      STP22N60M6 Pspice Model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      500/650 V MDmesh™ M2 1.0
      1.03 MB
      PDF
      600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency 1.0
      760.45 KB
      PDF
      600/650 V MDmesh™ M2 1.0
      788.16 KB
      PDF

      500/650 V MDmesh™ M2

      600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency

      600/650 V MDmesh™ M2

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STP22N60M6
批量生产
TO-220AB 工业 Ecopack2

STP22N60M6

Package:

TO-220AB

Material Declaration**:

Marketing Status

批量生产

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.