STP260N4F7 - N-channel 40 V, 1.8 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package - STMicroelectronics

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This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

主要特性
- Among the lowest R_DS(on) on the market
- Excellent FoM (figure of merit)
- Low C_rss/C_iss ratio for EMI immunity
- High avalanche ruggedness
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样片和购买

产品型号	封装	包装类型	供货状态	预算价格(US$)	数量	ECCN (US)	Country of Origin	从分销商订购	从ST订购
STP260N4F7	TO-220AB	Tube	批⁠量⁠生⁠产	0.88	1000	EAR99	CHINA	没有经销商，请联系我们的销售办事处

STP260N4F7

封装

TO-220AB

包装类型

Tube

单价(US$)

0.88*

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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技术文档

产品规格
- 描述版本文档大小操作
  
  DS11239
  N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package 2.0
  679.6 KB
  PDF
  
  DS11239
  
  N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package
  
  PDF

应用手册

	描述	版本	文档大小	操作
	AN3267 Impact of power MOSFET VGS on buck converter performance	1.2	1.13 MB	PDF
	AN4789 Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance	1.1	1,006.7 KB	PDF
	AN4191 Power MOSFET: Rg impact on applications	1.2	1.45 MB	PDF
	AN4390 ST’s MOSFET technologies for uninterruptible power supplies	1.1	1.22 MB	PDF
	AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	347.01 KB	PDF

AN3267

Impact of power MOSFET VGS on buck converter performance

AN4789

Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

AN4191

Power MOSFET: Rg impact on applications

AN4390

ST’s MOSFET technologies for uninterruptible power supplies

AN4337

The avalanche issue: comparing the impacts of the IAR and EAS parameters

用户手册
- 描述版本文档大小操作
  
  UM1575
  Spice model tutorial for Power MOSFETs 1.3
  1.51 MB
  PDF
  
  UM1575
  
  Spice model tutorial for Power MOSFETs
  
  PDF

出版刊物和宣传资料

宣传册

	描述	版本	文档大小	操作
	300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions	1.0	568.16 KB	PDF
	AEC-Q101 STripFET F7 MOSFETs for Automotive	1.0	743.73 KB	PDF
	STPOWER™ STripFET F7 MOSFET for Industrial applications	1.0	1.15 MB	PDF

300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

AEC-Q101 STripFET F7 MOSFETs for Automotive

STPOWER™ STripFET F7 MOSFET for Industrial applications

手册
- 描述版本文档大小操作
  
  Electric vehicle (EV) ecosystem 1.1
  1.28 MB
  PDF
  
  Electric vehicle (EV) ecosystem
  
  PDF

产品型号	供货状态	封装	等级规格	符合RoHS级别	材料声明**
STP260N4F7	批量生产	TO-220AB	Industrial	Ecopack2	PDF XML

STP260N4F7

Package:

TO-220AB

Material Declaration**:

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系销售支持。