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This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
主要特性
- Gate charge minimized
- Excellent figure of merit (RDS*Qg)
- 100% avalanche tested
- Very low intrinsic capacitances
- Very good manufactuing repeability
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
All tools & software
All resources
产品规格 (1)
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| 25 Sep 2020 |
25 Sep 2020
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应用手册 (4)
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (4)
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| 25 Sep 2019 |
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| 08 May 2020 |
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| 13 Jun 2019 |
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CAD/EDA Symbols, Footprints and Models
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
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| 最小值 | 最大值 | |||||||||||
| STP30NF20 | 5 distributors | Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-220AB | - | - | CHINA | ||
