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  • This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

    主要特性

    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STP33N60DM6 TO-220AB Tube
Active
2.6 - EAR99 CHINA No availability of distributors reported, please contact our sales office

STP33N60DM6

封装

TO-220AB

包装类型

Tube

Unit Price (US$)

2.6*

供货状态

Active

Unit Price (US$)

2.6

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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开发工具硬件

    • 产品型号

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • Description 版本 文档大小 操作
      DS12878
      N-channel 600 V, 115 mΩ typ., 35 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package
      2.0
      467.53 KB
      PDF
      DS12878

      N-channel 600 V, 115 mΩ typ., 35 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

    • Description 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • Description 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • Description 版本 文档大小 操作
      STP33N60DM6 pSpice Model 1.0
      5.44 KB
      ZIP

      STP33N60DM6 pSpice Model

产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STP33N60DM6
Active
TO-220AB 工业 Ecopack2

STP33N60DM6

Package:

TO-220AB

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.