STP33N60DM6

批量生产

N-channel 600 V, 115 mOhm typ., 25 A MDmesh DM6 Power MOSFET in a TO-220 package

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  • This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

    主要特性

    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
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从分销商订购
从ST订购
STP33N60DM6 TO-220AB Tube
批量生产
2.6 - EAR99 CHINA 没有经销商,请联系我们的销售办事处

STP33N60DM6

封装

TO-220AB

包装类型

Tube

单价(US$)

2.6*

供货状态

批量生产

单价(US$)

2.6

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

精选 产品

适合您的资源

开发工具硬件

    • 产品型号

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS12878
      N-channel 600 V, 115 mΩ typ., 35 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package
      2.0
      467.53 KB
      PDF
      DS12878

      N-channel 600 V, 115 mΩ typ., 35 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STP33N60DM6 pSpice Model 1.0
      5.44 KB
      ZIP

      STP33N60DM6 pSpice Model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      600 - 650 V MDmesh™ DM6: fast-recovery SJ MOSFETs boost efficiency and robustness 1.0
      920.13 KB
      PDF

      600 - 650 V MDmesh™ DM6: fast-recovery SJ MOSFETs boost efficiency and robustness

产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
STP33N60DM6
批量生产
TO-220AB 工业 Ecopack2

STP33N60DM6

Package:

TO-220AB

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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