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These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
主要特性
- Worldwide best RDS(on) * area
- Higher VDSSrating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
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开发工具硬件
| 产品型号 | 供货状态 | 封装 | 等级规格 | 符合RoHS级别 | Material Declaration** |
|---|---|---|---|---|---|
| STP36N55M5 | 批量生产 | TO-220AB | 工业 | Ecopack2 | |
STP36N55M5
Package:
TO-220ABMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
