STP5N80K5

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产品概述

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This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for application requiring superior power density and high efficiency.

所有功能
Industry’s lowest R_DS(on) x area

Industry’s best figure of merit (FoM)

Ultra low gate charge

100% avalanche tested

Zener-protected
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900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Watch the video (03:57)

800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

Watch the video (04:25)

600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

Watch the video (02:29)

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