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This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for application requiring superior power density and high efficiency.
主要特性
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
精选 视频
All tools & software
All resources
产品规格 (1)
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09 May 2016 |
09 May 2016
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应用手册 (4)
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技术文档 (1)
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13 Nov 2016
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用户手册 (1)
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21 Oct 2016
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宣传册 (5)
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手册 (1)
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EDA Symbols, Footprints and 3D Models
质量与可靠性
产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
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STP5N80K5 |
批量生产
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TO-220AB | 工业 | Ecopack2 |
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STP5N80K5
Package:
TO-220ABMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持 。
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STP5N80K5 | 3 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-220AB | - | - | CHINA |