STP65N045M9

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产品概述

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该N沟道Power MOSFET基于创新超结MDmesh M9技术，适合中/高电压MOSFET（具有非常低的单位面积导通电阻R_DS(on)）。基于硅的M9技术采用多漏制造工艺，支持增强型器件结构。在所有硅基快速开关超结Power MOSFET中，运用此工艺制造的产品具有较低的导通电阻并降低了栅极电荷值，使其特别适合需要超高功率密度和出色效率的应用。

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全球硅基器件中出色的FOM R_DS(on)*Q_g

更高的V_DSS额定值

更高的dv/dt性能

出色的开关性能

易于驱动

经过100％雪崩测试
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面向高功率应用的TO-LL无引线表面贴装型封装

意法半导体提供全新的高压MDmesh M6和M9 STPOWER MOSFET，这些产品采用紧凑且散热效率高的TO-LL表面贴装型封装，可同时提供高的电气和热效率、外形紧凑和节省空间等特性，适用于SMPS、数据中心和太阳能微逆变器等电源转换应用。这些器件具有附加的Kelvin源引脚，可减小接通/关断开关损耗，有助于设计人员进一步提高效率。

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	产品型号	状态	描述	类型	供应商
Worldwide,Asia,Europe,Africa,North America,South America,Oceania,Afghanistan,Bahrain,Bangladesh,Bhutan,Brunei,Burma (Myanmar),Cambodia,China,East Timor,India,Indonesia,Iraq,Japan,Jordan,Kazakhstan,Kuwait,Kyrgyzstan,Laos,Malaysia,Maldives,Mongolia,Nepal,Oman,Pakistan,Philippines,Qatar,Russian Federation,Saudi Arabia,Singapore,South Korea,Sri Lanka,Taiwan,Tajikistan,Thailand,Turkmenistan,United Arab Emirates,Uzbekistan,Vietnam,Yemen,Albania,Andorra,Armenia,Austria,Azerbaijan,Belarus,Belgium,Bosnia and Herzegovina,Bulgaria,Croatia,Cyprus,Czech Republic,Denmark,Estonia,Finland,France,Georgia,Germany,Greece,Hungary,Iceland,Ireland,Israel,Italy,Latvia,Liechtenstein,Lithuania,Luxembourg,Macedonia,Malta,Moldova,Monaco,Montenegro,Netherlands,Norway,Poland,Portugal,Romania,San Marino,Serbia,Slovakia,Slovenia,Spain,Sweden,Switzerland,Turkey,Ukraine,United Kingdom,Vatican City,Algeria,Angola,Benin,Botswana,Burkina,Burundi,Cameroon,Cape Verde,Central African Republic,Chad,Comoros,Democratic Republic of Congo,Djibouti,Egypt,Equatorial Guinea,Eritrea,Ethiopia,Gabon,Gambia,Ghana,Guinea,Guinea-Bissau,Ivory Coast,Kenya,Lesotho,Liberia,Libya,Madagascar,Malawi,Mali,Mauritania,Mauritius,Morocco,Mozambique,Namibia,Niger,Nigeria,Rwanda,Sao Tome and Principe,Senegal,Seychelles,Sierra Leone,Somalia,South Africa,Swaziland,Tanzania,Togo,Tunisia,Uganda,Zambia,Zimbabwe,Antigua and Barbuda,Bahamas,Barbados,Belize,Canada,Costa Rica,Dominica,Dominican Republic,El Salvador,Grenada,Guatemala,Haiti,Honduras,Jamaica,Mexico,Nicaragua,Panama,Saint Kitts and Nevis,Saint Lucia,Saint Vincent and the Grenadines,Trinidad and Tobago,United States,Argentina,Bolivia,Brazil,Chile,Colombia,Ecuador,Guyana,Paraguay,Peru,Suriname,Uruguay,Venezuela,Australia,Fiji,Kiribati,Marshall Islands,Micronesia,Nauru,New Zealand,Palau,Papua New Guinea,Samoa,Solomon Islands,Tonga,Tuvalu,Vanuatu	STPOWER MOSFET Finder	批量生产	用于安卓和iOS的MOSFET产品查找应用	Finder应用程序	ST	STPOWER MOSFET Finder 描述: 用于安卓和iOS的MOSFET产品查找应用

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	资源标题	版本	更新时间
PDF	DS13506 N-channel 650 V, 39 mΩ typ., 54 A MDmesh M9 Power MOSFET in a TO-220 package	5.0	05 Sep 2023	05 Sep 2023 DS13506 N-channel 650 V, 39 mΩ typ., 54 A MDmesh M9 Power MOSFET in a TO-220 package 5.0

	资源标题	版本	更新时间
PDF	AN4250 Fishbone diagram for power factor correction	1.1	13 Sep 2018	13 Sep 2018 AN4250 Fishbone diagram for power factor correction 1.1
PDF	AN2842 Paralleling of power MOSFETs in PFC topology	1.4	13 Sep 2018	13 Sep 2018 AN2842 Paralleling of power MOSFETs in PFC topology 1.4
PDF	AN2344 Power MOSFET avalanche characteristics and ratings	1.3	13 Sep 2018	13 Sep 2018 AN2344 Power MOSFET avalanche characteristics and ratings 1.3
PDF	AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	13 Sep 2018	13 Sep 2018 AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

	资源标题	版本	更新时间
PDF	TN1378 HU3PAK package mounting and thermal behavior	1.0	19 Nov 2021	19 Nov 2021 TN1378 HU3PAK package mounting and thermal behavior 1.0
PDF	TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products	1.0	13 Nov 2016	13 Nov 2016 TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0
PDF	TN1224 Mounting instructions for SMD (surface mounting device) packages	2.4	11 Jul 2023	11 Jul 2023 TN1224 Mounting instructions for SMD (surface mounting device) packages 2.4
PDF	TN1225 Mounting instructions for THD (through hole device) packages	1.1	11 Jul 2023	11 Jul 2023 TN1225 Mounting instructions for THD (through hole device) packages 1.1

	资源标题	版本	更新时间
PDF	UM1575 Spice model tutorial for Power MOSFETs	1.3	21 Oct 2016	21 Oct 2016 UM1575 Spice model tutorial for Power MOSFETs 1.3

	资源标题	版本	更新时间
PDF	250V-600V-650V MDmesh M9	1.0	22 May 2023	22 May 2023 250V-600V-650V MDmesh M9 1.0
PDF	300-1200 V MDmesh power MOSFETs	1.0	13 Apr 2023	13 Apr 2023 300-1200 V MDmesh power MOSFETs 1.0
PDF	300-1200 V MDmesh: The most complete SJ MOSFETs offer for (H)EV power solutions	1.0	15 Sep 2021	15 Sep 2021 300-1200 V MDmesh: The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
PDF	400/650 V MDmesh™ DM2: STPOWER Power MOSFET series with fast-recovery body diode	1.1	13 Apr 2023	13 Apr 2023 400/650 V MDmesh™ DM2: STPOWER Power MOSFET series with fast-recovery body diode 1.1
PDF	600 - 650 V MDmesh DM9: Fast-recovery SJ Power MOSFETs boost efficiency and robustness	1.0	26 Jul 2023	26 Jul 2023 600 - 650 V MDmesh DM9: Fast-recovery SJ Power MOSFETs boost efficiency and robustness 1.0
PDF	600 V-650 V MDmesh M9: Super-junction Power MOSFETs for best efficiency	1.0	06 May 2022	06 May 2022 600 V-650 V MDmesh M9: Super-junction Power MOSFETs for best efficiency 1.0
PDF	ST MOSFET Finder, the new app for Android and iOS	1.0	08 May 2020	08 May 2020 ST MOSFET Finder, the new app for Android and iOS 1.0

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	资源标题	版本	更新时间
ZIP	STP65N045M9 SPICE model	1.0	16 Feb 2022	16 Feb 2022 STP65N045M9 SPICE model 1.0

质量与可靠性

产品型号	Marketing Status	封装	等级规格	符合RoHS级别	材料声明**
STP65N045M9	批量生产	TO-220	工业	Ecopack2	PDF XML

STP65N045M9

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TO-220

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STP65N045M9 批量生产

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TO-220

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EAR99

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(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处或我们的经销商。

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STPOWER MOSFET Finder

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EDA符号、封装和3D模型

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STP65N045M9

产品概述

描述

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精选 视频

All tools & software

Finder应用程序

STPOWER MOSFET Finder

全部资源

产品规格 (1)

应用手册 (4)

技术文档 (4)

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EDA符号、封装和3D模型

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