产品概述

描述

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

所有功能
Industry’s lowest R_DS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected
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900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Watch the video (03:57)

800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

Watch the video (04:25)

600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

Watch the video (02:29)

All tools & software

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	产品型号	状态	描述	类型	供应商
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