产品概述
描述
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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所有功能
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STP7N105K5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STP7N105K5 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | TO-220 | Tube | CHINA | EAR99 | NEC | - | - | - | |||
STP7N105K5 批量生产
Budgetary Price (US$)*/Qty:
-
distributors
无法联系到经销商，请联系我们的销售办事处
封装:
TO-220
包装类型:
Tube
RoHS:
-
Country of Origin:
CHINA
ECCN (US):
EAR99
ECCN (EU):
NEC
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