N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220 package

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  • These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

    Key Features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
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从ST订购
STP7NM80 TO-220AB Tube
NRND
- - EAR99 - 查看供货情况

Distributor availability ofSTP7NM80

代理商名称
地区 库存 最小订购量 Third party link
AVNET AMERICA 2000 0 Order Now
ARROW EUROPE 3015 0 Order Now

代理商库存报告日期: 2019-11-15

代理商名称

AVNET

库存

2000

Min.Order

0

地区

AMERICA Order Now

ARROW

库存

3015

Min.Order

0

地区

EUROPE Order Now

代理商库存报告日期: 2019-11-15

STP7NM80

封装

TO-220AB

包装类型

Tube

单价(US$)

*

Distributor availability ofSTP7NM80

代理商名称
地区 库存 最小订购量 Third party link
AVNET AMERICA 2000 0 Order Now
ARROW EUROPE 3015 0 Order Now

代理商库存报告日期: 2019-11-15

代理商名称

AVNET

库存

2000

Min.Order

0

地区

AMERICA Order Now

ARROW

库存

3015

Min.Order

0

地区

EUROPE Order Now

代理商库存报告日期: 2019-11-15

供货状态

NRND

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

-

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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开发工具硬件

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技术文档

    • 描述 版本 文档大小 操作
      DS4854
      N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages
      4.0
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      DS4854

      N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
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      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
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      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
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      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      STP7NM80 PSpice model 1.0
      1.42 KB
      ZIP

      STP7NM80 PSpice model

产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
STP7NM80
NRND
TO-220AB 工业 Ecopack2

STP7NM80

Package:

TO-220AB

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.