STP7NM80

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N沟道800 V、0.95 Ohm、6.5 A MDmesh(TM) 功率MOSFET,TO-220封装

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  • These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

    主要特性

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

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STMicroelectronics - STP7NM80

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