产品概述
描述
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.-
所有功能
- Designed for automotive applications and AEC-Q101 qualified
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
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产品规格 (1)
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应用手册 (4)
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13 Jun 2019 | 13 Jun 2019 |