产品概述
描述
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.-
所有功能
- Designed for automotive applications and AEC-Q101 qualified
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications