产品概述
描述
These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
-
所有功能
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STP9N80K5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
全部资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 15 Jun 2016 | 15 Jun 2016 |
样片和购买
Don't show this again
| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STP9N80K5 | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tube | TO-220 | - | - | CHINA | | ||
distributors
无法联系到经销商，请联系我们的销售办事处
Don't show this again